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IRF7831PBF
Power MOSFET, N Channel, 30 V, 21 A, 0.0036 ohm, SOIC, Surface Mount
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7831PBF
Order Code1013448
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id21A
Drain Source On State Resistance0.0036ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.35V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IRF7831PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
- 100% Rg tested
Applications
Computers & Computer Peripherals, Communications & Networking, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.35V
No. of Pins
8Pins
Product Range
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000167