Print Page
Image is for illustrative purposes only. Please refer to product description.

No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS52N15DPBFCopy
Order Code1298503
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id60A
Drain Source On State Resistance0.032ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The IRFS52N15DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
- Fully characterized avalanche voltage and current
- Low gate-to-drain charge to reduce switching losses
Applications
Power Management, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
320W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143
