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IRLIB4343PBF
Power MOSFET, N Channel, 55 V, 19 A, 0.05 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLIB4343PBFCopy |
| Order Code | 9933859 |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLIB4343PBFCopy |
| Order Code | 9933859 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.05ohm |
| Transistor Case Style | TO-220FP |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1V |
| Power Dissipation | 39W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (17-Dec-2015) |
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Product Overview
The IRLIB4343PBF is a HEXFET® N-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.
- Advanced process technology
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- Repetitive avalanche capability for robustness and reliability
Applications
Audio, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 19A |
| Transistor Case Style | TO-220FP |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 39W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (17-Dec-2015) |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source On State Resistance | 0.05ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 1V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | United States Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | To be advised |
| SVHC: | No SVHC (17-Dec-2015) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .00195 |