IRLMS2002TRPBF
Power MOSFET, N Channel, 20 V, 6.5 A, 0.03 ohm, SOT-23, Surface Mount
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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.708 | S$3.54 |
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.708 (S$0.7717) |
| 10+ | S$0.458 (S$0.4992) |
| 100+ | S$0.341 (S$0.3717) |
| 500+ | S$0.333 (S$0.363) |
| 1000+ | S$0.242 (S$0.2638) |
| 5000+ | S$0.236 (S$0.2572) |
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.242 (S$0.2638) |
| 9000+ | S$0.236 (S$0.2572) |
Product Information
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Product Overview
The IRLMS2002TRPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
- Ultra-low ON-resistance
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
6.5A
SOT-23
4.5V
2W
150°C
-
No SVHC (21-Jan-2025)
20V
0.03ohm
Surface Mount
1.2V
6Pins
HEXFET
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate