IRLR8103VPBF
Power MOSFET, N Channel, 30 V, 91 A, 9000 µohm, TO-252 (DPAK), Surface Mount
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR8103VPBFCopy |
| Order Code | 8651299 |
| Your Part Number | |
| Technical Datasheet |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR8103VPBFCopy |
| Order Code | 8651299 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 91A |
| Drain Source On State Resistance | 9000µohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 115W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
Product Overview
The IRLR8103VPBF is a HEXFET® single N-channel Power MOSFET ideal for CPU core DC-to-DC converters. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. The IRLR8103V offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. The package is designed for vapour phase, infrared, convection or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. This minimizes parallel MOSFET is ideal for high current applications.
- Low conduction losses
- Low switching losses
- 100% Rg tested
- Fully avalanche rating
- Logic Level
Applications
Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 91A |
| Transistor Case Style | TO-252 (DPAK) |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 115W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 9000µohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | To be advised |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0004 |