IS42S32160F-7BLI

IS42S32160F-7BLI is a 512Mb synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. It is a high speed CMOS, dynamic random-access memory designed to operate in either 3.3V Vdd/Vddq or 2.5V Vdd/Vddq memory systems, depending on the DRAM option. Internally configured as a quad-bank DRAM with a synchronous interface. The 512Mb SDRAM (536,870,912 bits) includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.

• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• LVTTL interface, programmable burst sequence: sequential/interleave
• Auto refresh (CBR), self refresh, 8K refresh cycles every 64ms
• Random column address every clock cycle, programmable active-low CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• 143MHz frequency, 7ns speed
• 90-ball BGA package
• Industrial temperature rating range from -40°C to +85°C