IRF5210S
Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263, Surface Mount
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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$2.740 | S$2.74 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$2.740 (S$2.9866) |
| 10+ | S$1.750 (S$1.9075) |
| 100+ | S$1.190 (S$1.2971) |
| 500+ | S$0.966 (S$1.0529) |
| 1000+ | S$0.890 (S$0.9701) |
| 5000+ | S$0.812 (S$0.8851) |
Product Information
Product Overview
The IRF5210S is a high-performance P-channel MOSFET optimized for power switching and management in demanding applications. With a low R��������(��������) of 0.08٠(typical) and a high drain current capability of -33A, it provides efficient operation with minimal power loss. Its robust design ensures reliable performance in high-power circuits. The IRF5210S is ideal for applications such as motor control, DC-DC converters, power inverters, and battery protection systems. Encased in a D2PAK (TO-263) package, it offers excellent thermal performance and ease of integration, making it a dependable choice for automotive, industrial, and consumer electronic systems requiring reliable and efficient power management solutions.
- VDS (V) =100V
- ID =-38A
- RDS(ON) = 60mΩ @ VGS =-10V
- Ultra Low On-Resistance
- Fast Switching
- Advanced Process Technology
Applications
DC/DC Converters, Power Supplies, Motor Drive & Control, LED Lighting, RF Communications, Portable Devices
Technical Specifications
P Channel
38A
TO-263
10V
170W
150°C
-
No SVHC (04-Feb-2026)
100V
0.06ohm
Surface Mount
4V
3Pins
Multicomp Pro Power MOSFETs
-
Technical Docs (1)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Product Compliance Certificate