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BSP100
Power MOSFET, N Channel, 30 V, 6 A, 0.08 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP100
Order Code1510763
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6A
Drain Source On State Resistance0.08ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation8.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSP100 is a N-channel enhancement-mode MOSFET in a plastic envelope using Trench TrenchMOS™ technology. It is suitable for DC to DC converters and logic level translator applications.
- Low ON-state resistance
- Fast switching
- High thermal cycling performance
- Low thermal resistance
- -65 to 150°C Operating junction temperature range
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
8.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012