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FDB035AN06A0
Power MOSFET, N Channel, 60 V, 80 A, 3500 µohm, TO-263 (D2PAK), Surface Mount
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB035AN06A0
Order Code1471026
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance3500µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for FDB035AN06A0
3 Products Found
Product Overview
The FDB035AN06A0 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuit.
- Low miller charge
- Low Qrr body diode
- UIS capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001