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FDB28N30TM
Power MOSFET, N Channel, 300 V, 28 A, 0.129 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDB28N30TMCopy |
| Manufacturer Standard Lead Time | 38 weeks |
| Order Code | Re-Reel2453391RL Cut Tape2453391 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$5.400 | S$5.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$5.400 (S$5.886) |
| 10+ | S$2.710 (S$2.9539) |
| 100+ | S$2.190 (S$2.3871) |
| 500+ | S$1.810 (S$1.9729) |
| 1000+ | S$1.780 (S$1.9402) |
| 5000+ | S$1.740 (S$1.8966) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDB28N30TMCopy |
| Manufacturer Standard Lead Time | 38 weeks |
| Order Code | Re-Reel2453391RL Cut Tape2453391 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 300V |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 0.129ohm |
| Transistor Case Style | TO-263AB |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 250W |
| No. of Pins | 2Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (25-Jun-2025) |
Product Overview
The FDB28N30TM is a N-channel enhancement-mode Power FET produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
- Improved dV/dt capability
- 100% avalanche tested
- Fast switching
- 39nC typical low gate charge
- 35pF typical low Crss
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 28A |
| Transistor Case Style | TO-263AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 250W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (25-Jun-2025) |
| Drain Source Voltage Vds | 300V |
|---|---|
| Drain Source On State Resistance | 0.129ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 2Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (3)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .001312 |