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FDG1024NZ.
Dual MOSFET, N Channel, 20 V, 20 V, 1.2 A, 1.2 A, 0.16 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDG1024NZ.Copy |
| Order Code | 2322589 |
| Your Part Number | |
| Technical Datasheet |
No Longer Stocked
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDG1024NZ.Copy |
| Order Code | 2322589 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 1.2A |
| Continuous Drain Current Id P Channel | 1.2A |
| Drain Source On State Resistance N Channel | 0.16ohm |
| Drain Source On State Resistance P Channel | 0.16ohm |
| Transistor Case Style | SC-70 |
| No. of Pins | 6Pins |
| Power Dissipation N Channel | 360mW |
| Power Dissipation P Channel | 360mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) <lt/>1V)
- Very small package outline
- ±8V Gate to source voltage
- 1.2A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id P Channel | 1.2A |
| Drain Source On State Resistance P Channel | 0.16ohm |
| No. of Pins | 6Pins |
| Power Dissipation P Channel | 360mW |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 20V |
|---|---|
| Continuous Drain Current Id N Channel | 1.2A |
| Drain Source On State Resistance N Channel | 0.16ohm |
| Transistor Case Style | SC-70 |
| Power Dissipation N Channel | 360mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000318 |