FDN357N
Power MOSFET, N Channel, 30 V, 2.5 A, 0.06 ohm, SOT-23, Surface Mount
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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.613 | S$3.06 |
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.613 (S$0.6682) |
| 50+ | S$0.577 (S$0.6289) |
| 100+ | S$0.540 (S$0.5886) |
| 500+ | S$0.369 (S$0.4022) |
| 1500+ | S$0.361 (S$0.3935) |
| 3000+ | S$0.343 (S$0.3739) |
| 7500+ | S$0.325 (S$0.3542) |
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.259 (S$0.2823) |
| 9000+ | S$0.254 (S$0.2769) |
Product Information
Product Overview
The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
Technical Specifications
N Channel
2.5A
SOT-23
4.5V
500mW
150°C
-
No SVHC (25-Jun-2025)
30V
0.06ohm
Surface Mount
1.6V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate