FDP61N20
Power MOSFET, N Channel, 200 V, 61 A, 0.034 ohm, TO-220, Through Hole
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDP61N20Copy |
| Manufacturer Standard Lead Time | 11 weeks |
| Order Code | 1228360 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$5.010 (S$5.4609) |
| 10+ | S$2.550 (S$2.7795) |
| 100+ | S$2.300 (S$2.507) |
| 500+ | S$1.990 (S$2.1691) |
| 1000+ | S$1.960 (S$2.1364) |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDP61N20Copy |
| Manufacturer Standard Lead Time | 11 weeks |
| Order Code | 1228360 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 200V |
| Continuous Drain Current Id | 61A |
| Drain Source On State Resistance | 0.034ohm |
| Transistor Case Style | TO-220 |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 417W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | Lead (25-Jun-2025) |
Product Overview
The FDP61N20 is a 200V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Applications
Power Management, Lighting
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 61A |
| Transistor Case Style | TO-220 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 417W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (25-Jun-2025) |
| Drain Source Voltage Vds | 200V |
|---|---|
| Drain Source On State Resistance | 0.034ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002 |