FDS6675BZ
Power MOSFET, P Channel, 30 V, 11 A, 0.013 ohm, SOIC, Surface Mount
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDS6675BZCopy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2323196 Re-Reel1495209RL Cut Tape1495209 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$1.290 | S$6.45 |
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$1.290 (S$1.4061) |
| 50+ | S$1.110 (S$1.2099) |
| 100+ | S$0.927 (S$1.0104) |
| 500+ | S$0.760 (S$0.8284) |
| 1000+ | S$0.758 (S$0.8262) |
| Quantity | Price (inc GST) |
|---|---|
| 2500+ | S$0.496 (S$0.5406) |
| 7500+ | S$0.482 (S$0.5254) |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDS6675BZCopy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2323196 Re-Reel1495209RL Cut Tape1495209 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.013ohm |
| Transistor Case Style | SOIC |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2V |
| Power Dissipation | 2.5W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDS6675BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±5.4kV typical
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 11A |
| Transistor Case Style | SOIC |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 2.5W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 0.013ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 2V |
| No. of Pins | 8Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000226 |