FDS6680AS
Power MOSFET, N Channel, 30 V, 11.5 A, 0.01 ohm, SOIC, Surface Mount
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDS6680ASCopy |
| Order Code | Re-Reel1495210RL Cut Tape1495210 |
| Your Part Number | |
| Technical Datasheet |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDS6680ASCopy |
| Order Code | Re-Reel1495210RL Cut Tape1495210 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 11.5A |
| Drain Source On State Resistance | 0.01ohm |
| Transistor Case Style | SOIC |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.5V |
| Power Dissipation | 2.5mW |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
Product Overview
The FDS6680AS is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low RDS (on)
- High power and current handing capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 11.5A |
| Transistor Case Style | SOIC |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 2.5mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 0.01ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.5V |
| No. of Pins | 8Pins |
| Product Range | - |
Technical Docs (3)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | United States Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .004536 |