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KSA1156YS
Bipolar (BJT) Single Transistor, PNP, 400 V, 500 mA, 10 W, TO-126, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSA1156YSCopy
Order Code2825096
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max400V
Continuous Collector Current500mA
Power Dissipation10W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
- PNP silicon transistor
- High voltage switching and low power switching regulator
- DC-DC converter
- High breakdown voltage
- Low collector saturation voltage
- High speed switching
- General usage and suitable for many different applications
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
500mA
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
400V
Power Dissipation
10W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000896