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MJD44H11TM
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK)
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ManufacturerONSEMI
Manufacturer Part NoMJD44H11TMCopy
Order Code
Re-Reel1228219RL
Cut Tape1228219
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD44H11TMCopy
Order Code
Re-Reel1228219RL
Cut Tape1228219
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current8A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MJD44H11TM
3 Products Found
Product Overview
The MJD44H11TM is a NPN Epitaxial Silicon Transistor designed for general-purpose power and switching (such as output or driver stages) applications.
- Lead formed for surface-mount application
- Low collector emitter saturation voltage
- Fast switching speeds
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
80V
Power Dissipation
20W
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
60hFE
Product Range
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033