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2N4401G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2N4401GCopy
Order Code9556427
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Continuous Collector Current600mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency250MHz
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
Alternatives for 2N4401G
6 Products Found
Product Overview
The 2N4401G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications.
- 200°C/W Junction-to-ambient thermal resistance
- 83.3°C/W Junction-to-case thermal resistance
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
250hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
250MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454