Print Page
FDP6670AL
Power MOSFET, N Channel, 30 V, 80 A, 6500 µohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP6670ALCopy
Order Code1467978
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance6500µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Alternatives for FDP6670AL
4 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
75W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
6500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002