NDP6060
Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDP6060Copy |
| Manufacturer Standard Lead Time | 39 weeks |
| Order Code | 1017725 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$7.040 (S$7.6736) |
| 10+ | S$4.610 (S$5.0249) |
| 100+ | S$3.440 (S$3.7496) |
| 500+ | S$2.890 (S$3.1501) |
| 1000+ | S$2.680 (S$2.9212) |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDP6060Copy |
| Manufacturer Standard Lead Time | 39 weeks |
| Order Code | 1017725 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 48A |
| Drain Source On State Resistance | 0.025ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.9V |
| Power Dissipation | 100W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 48A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 100W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 0.025ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 2.9V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | South Korea Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .004536 |