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RJK0652DPB-00#J5
Power MOSFET, N Channel, 60 V, 35 A, 0.0055 ohm, SC-100, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerRENESAS
Manufacturer Part NoRJK0652DPB-00#J5
Order Code2135161
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0055ohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation55W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The RJK0652DPB-00#J5 is a 35A 60V surface-mount 1-channel silicon N-channel power MOSFET Power Switching with low drive current and low on-resistance. It is capable of 4.5V gate drive and 55W power dissipation.
- High speed switching
- Low on-resistance
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
5Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00029