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2N7000
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part No2N7000
Order Code9935118
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max2.1V
Power Dissipation400mW
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for 2N7000
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
4.5V
Power Dissipation
400mW
Product Range
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.1V
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002