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STB60N55F3
Power MOSFET, N Channel, 55 V, 80 A, 0.0085 ohm, TO-263 (D2PAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB60N55F3
Order Code1456340
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0085ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
Operating Temperature Max175°C
Product Range-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Product Range
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0015