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STP2NK60Z
Power MOSFET, N Channel, 600 V, 1.4 A, 8 ohm, TO-220, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP2NK60ZCopy
Order Code9512675
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id1.4A
Drain Source On State Resistance8ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage30V
Gate Source Threshold Voltage Max3.75V
Power Dissipation45W
Operating Temperature Max150°C
Product Range-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
TO-220
Rds(on) Test Voltage
30V
Power Dissipation
45W
Product Range
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
Operating Temperature Max
150°C
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002