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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS14N3LLH5Copy
Order Code1752181
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7A
Drain Source On State Resistance5000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.7W
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The STS14N3LLH5 is a N-channel Power MOSFET utilizes the 5th generation of design rules of STripFET™ V technology. The lowest available RDS (ON)*Qg, in SO-8 package, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
- RDS (ON) x Qg industry benchmark
- Extremely low ON-resistance RDS (ON)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.7W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002
