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VNQ860-E
MOSFET, SMART SWITCH, SO-20
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoVNQ860-E
Order Code8165467
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds41V
Continuous Drain Current Id250mA
Drain Source On State Resistance0.27ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation16W
Operating Temperature Max150°C
Product Range-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
250mA
Transistor Case Style
SOIC
Rds(on) Test Voltage
-
Power Dissipation
16W
Product Range
-
Drain Source Voltage Vds
41V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
Operating Temperature Max
150°C
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006