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Quantity | Price (inc GST) |
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Multiple: 5
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Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD23202W10T
Order Code3125067
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.044ohm
Transistor Case StyleDSBGA
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation1W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The CSD23202W10T is a NexFET™ P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in a small 1 × 1mm outline. It has excellent thermal characteristics in an ultra-low profile.
- Ultra-low Qg and Qgd
- Low profile 0.62mm height
- 3kV Gate ESD protection
- Halogen-free
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Safety, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Transistor Case Style
DSBGA
Rds(on) Test Voltage
4.5V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.044ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005