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CSD86336Q3DT
Dual MOSFET, N Channel, 25 V, 25 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD86336Q3DT
Order Code2860282RL
Product RangeNexFET Series
Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD86336Q3DT
Order Code2860282RL
Product RangeNexFET Series
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id-
On Resistance Rds(on)-
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Transistor Case StyleVSON
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd6W
Product RangeNexFET Series
Qualification-
Automotive Qualification Standard-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
-
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Transistor Case Style
VSON
Power Dissipation Pd
6W
Qualification
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
On Resistance Rds(on)
-
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
1.5V
Product Range
NexFET Series
Automotive Qualification Standard
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000012