Print Page
2N7002K-T1-GE3
Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part No2N7002K-T1-GE3Copy
Manufacturer Standard Lead Time13 weeks
Order Code
Full Reel3879336
Re-Reel1858936RL
Cut Tape1858936
Your Part Number
41,044 In Stock
12,000 more incoming. You can reserve stock now
41,044 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.294 | S$1.47 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.294 (S$0.3205) |
| 50+ | S$0.240 (S$0.2616) |
| 100+ | S$0.184 (S$0.2006) |
| 500+ | S$0.122 (S$0.133) |
| 1500+ | S$0.119 (S$0.1297) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.115 (S$0.1253) |
| 9000+ | S$0.103 (S$0.1123) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part No2N7002K-T1-GE3Copy
Manufacturer Standard Lead Time13 weeks
Order Code
Full Reel3879336
Re-Reel1858936RL
Cut Tape1858936
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id190mA
Drain Source On State Resistance2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage.
- 2Ω Low ON-resistance
- 2V Low threshold
- 25pF Low input capacitance
- 25ns Fast switching speed
- 2000V ESD Protection
- Halogen-free
- Low offset voltage
- Low-voltage operation
- Easily driven without buffer
- High-speed circuits
- Low error voltage
Applications
Portable Devices, Lighting, Communications & Networking, Imaging, Video & Vision, Signal Processing, Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
190mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for 2N7002K-T1-GE3
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008