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SI1926DL-T1-E3
Dual MOSFET, N Channel, 60 V, 60 V, 370 mA, 370 mA, 1.4 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI1926DL-T1-E3
Order Code2646364RL
Product RangeTrenchFET Series
Technical Datasheet
2,556 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.339 (S$0.3695) |
| 500+ | S$0.238 (S$0.2594) |
| 1500+ | S$0.234 (S$0.2551) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$33.90 (S$36.95 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1926DL-T1-E3
Order Code2646364RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id370mA
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel370mA
On Resistance Rds(on)1.4ohm
Continuous Drain Current Id P Channel370mA
Drain Source On State Resistance N Channel1.4ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel1.4ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation Pd510mW
Power Dissipation N Channel510mW
Power Dissipation P Channel510mW
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
370mA
Continuous Drain Current Id N Channel
370mA
Continuous Drain Current Id P Channel
370mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
Power Dissipation Pd
510mW
Power Dissipation P Channel
510mW
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.4ohm
Drain Source On State Resistance N Channel
1.4ohm
Drain Source On State Resistance P Channel
1.4ohm
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation N Channel
510mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SI1926DL-T1-E3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000123