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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301BDS-T1-E3
Order Code1470099
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.4A
Drain Source On State Resistance0.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Power Dissipation900mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (19-Jan-2021)
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Product Overview
The SI2301BDS-T1-E3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
950mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00004