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SI4908DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 5 A, 0.048 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SI4908DY-T1-GE3Copy |
| Order Code | 1858967 |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SI4908DY-T1-GE3Copy |
| Order Code | 1858967 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 40V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 5A |
| Continuous Drain Current Id P Channel | - |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 1.85W |
| Power Dissipation P Channel | - |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id P Channel | - |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | - |
| Product Range | - |
| Drain Source Voltage Vds N Channel | 40V |
|---|---|
| Continuous Drain Current Id N Channel | 5A |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 1.85W |
| Operating Temperature Max | 150°C |
| Qualification | - |
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Taiwan Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | To be advised |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0005 |