Print Page
SI5447DC
MOSFET, P, 1206-8
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5447DCCopy
Order Code9550666
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.8A
Drain Source On State Resistance0.16ohm
Transistor Case Style1206
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation1.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.8A
Transistor Case Style
1206
Rds(on) Test Voltage
4.5V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.16ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001