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SI5935CDC-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 4 A, 4 A, 0.083 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Full Reel2679697
Re-Reel2646387RL
Cut Tape2646387
Product RangeTrenchFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 56 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.765 | S$3.82 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.765 (S$0.8338) |
| 50+ | S$0.630 (S$0.6867) |
| 100+ | S$0.494 (S$0.5385) |
| 500+ | S$0.342 (S$0.3728) |
| 1500+ | S$0.336 (S$0.3662) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.320 (S$0.3488) |
| 9000+ | S$0.288 (S$0.3139) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Full Reel2679697
Re-Reel2646387RL
Cut Tape2646387
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.083ohm
Drain Source On State Resistance P Channel0.083ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.083ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.083ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129