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ManufacturerVISHAY
Manufacturer Part NoSI7102DN-T1-E3Copy
Order Code
Re-Reel1497630RL
Cut Tape1497630
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7102DN-T1-E3Copy
Order Code
Re-Reel1497630RL
Cut Tape1497630
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id35A
Drain Source On State Resistance3800µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
Product Overview
The SI7102DN-T1-E3 is a 12VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, secondary synchronous rectification and point-of-load applications.
- 100% Rg tested
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- -50 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
12V
Drain Source On State Resistance
3800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000064
