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SI7860DP-T1-E3
TRANSISTOR, MOSFET
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7860DP-T1-E3Copy
Order Code
Re-Reel1653688RL
Cut Tape1653688
Your Part Number
No Longer Manufactured
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7860DP-T1-E3Copy
Order Code
Re-Reel1653688RL
Cut Tape1653688
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18A
Drain Source On State Resistance8000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):2.27