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SI8401DB-T1-E3
MOSFET, N, MICRO FOOT
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8401DB-T1-E3
Order Code1612653
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.065ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max4.5V
Power Dissipation2.77W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
4.5V
Power Dissipation
2.77W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001