ADG1201BRJZ-R2

ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process. iCMOS is a modular manufacturing process combining a high voltage CMOS and bipolar technologies. iCMOS enables the development of a wide range of high performance analogue ICs capable of 33V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analogue ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. It is used in application such as automatic test equipment, data acquisition systems, battery-powered systems, sample-and-hold systems, audio signal routing, video signal routing, communication systems etc.

• 2.4pF typical off switch source capacitance
• Charge injection is 0.8pC typical at (VS = 6V, RS = 0 ohm, CL = 1nF)
• Low leakage current is 0.6nA maximum at 85°C
• 120 ohm typical on resistance at 25°C, dual supply
• Fully specified at ±15V, +12V
• No VL supply required, 3V logic-compatible inputs
• Rail-to-rail operation
• 660MHz typical -3dB bandwidth
• Operating industrial temperature is -40°C to +125°C
• Package style is 6-lead small outline transistor [SOT-23]

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party