ADPA7006AEHZ-R7

ADPA7006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), with upto 29dBm of output P1dB. It has an integrated temperature compensated on-chip power detector that operates between 18GHz and 44GHz. It provides 23dB of small signal gain and approximately 30dBm of saturated output power at 30GHz from a 5V supply. With an output IP3 of 37.5dBm, this device is ideal for linear applications such as electronic counter measure and instrumentation applications requiring <gt/>27dBm of efficient saturated output power. The RF inputs and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. It is used in applications such as test instrumentation, communications etc.

• Integrated power detector
• Supply voltage is 5V at IDQ = 800mA
• Gain flatness is ±1dB typical at (18GHz to 24GHz, TA = 25°C)
• Gain variation over temperature is 0.026dB/°C typical at (18GHz to 24GHz, TA = 25°C)
• Output third-order intercept is 34dBm typical at (18GHz to 24GHz, TA = 25°C)
• Quiescent drain current is 800mA typical at (18GHz to 24GHz, TA = 25°C)
• Operating temperature is -40°C to +85°C
• Package style is 16-terminal ceramic leadless chip carrier with heat sink [LCC-HS]

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party