IRF7104TRPBF
Dual MOSFET, P Channel, 20 V, 20 V, 2.3 A, 2.3 A, 0.19 ohm
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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$1.910 | S$1.91 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.910 (S$2.0819) |
| 10+ | S$0.981 (S$1.0693) |
| 100+ | S$0.675 (S$0.7358) |
| 500+ | S$0.619 (S$0.6747) |
| 1000+ | S$0.489 (S$0.533) |
| 5000+ | S$0.476 (S$0.5188) |
Product Information
Product Overview
The IRF7104TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
P Channel
20V
2.3A
0.19ohm
8Pins
2W
-
MSL 1 - Unlimited
20V
2.3A
0.19ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate