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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRGB10B60KDPBF
Order Code8659567
Technical Datasheet
Continuous Collector Current22A
Collector Emitter Saturation Voltage2.2V
Power Dissipation104W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
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Product Overview
The IRGB10B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
- Low diode VF
- Square RBSOA
- Positive VCE (on) temperature coefficient
- Rugged transient performance
- Low EMI
- Excellent current sharing in parallel operation
- 10μs Short-circuit capability
Applications
HVAC, Consumer Electronics, Alternative Energy, Power Management, Motor Drive & Control, Maintenance & Repair
Technical Specifications
Continuous Collector Current
22A
Power Dissipation
104W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002631