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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4PSH71UDPBF
Order Code1078441
Technical Datasheet
Continuous Collector Current99A
Collector Emitter Saturation Voltage2.7V
Power Dissipation350W
Transistor Case StyleTO-274AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRG4PSH71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The ultrafast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations.
- Creepage distance increased to 5.35mm
- High efficiency
- Maximum power density
- Optimized for specific application conditions
- HEXFRED™ anti-parallel diode minimizes switching losses and EMI
Applications
Alternative Energy, Maintenance & Repair, Power Management
Technical Specifications
Continuous Collector Current
99A
Power Dissipation
350W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
2.7V
Transistor Case Style
TO-274AA
Operating Temperature Max
150°C
Product Range
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008038