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RJH60F5DPQ-A0#T0
IGBT, 80 A, 1.7 V, 260.4 W, 600 V, TO-247, 3 Pins
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No Longer Stocked
Product Information
ManufacturerRENESAS
Manufacturer Part NoRJH60F5DPQ-A0#T0
Order Code2135155
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.7V
Power Dissipation260.4W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The RJH60F5DPQ-A0#T0 is a 40A 600V IGBT through-hole 1-channel mounting high-speed Power Switching with low collector to emitter saturation voltage. It has trench gate and thin wafer technology.
- Built-in FRD configuration
Applications
Consumer Electronics
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
260.4W
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00614