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IRGIB7B60KDPBF
IGBT, 12 A, 2.2 V, 39 W, 600 V, TO-220FP, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRGIB7B60KDPBF
Order Code8659648
Technical Datasheet
Continuous Collector Current12A
Collector Emitter Saturation Voltage2.2V
Power Dissipation39W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220FP
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRGIB7B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and excellent current sharing in parallel operation.
- Square RBSOA
- Positive VCE (on) temperature coefficient
- Rugged transient performance
- Low EMI
- 10µs Short-circuit capability
Applications
Motor Drive & Control, Consumer Electronics, Lighting, Alternative Energy, Power Management
Technical Specifications
Continuous Collector Current
12A
Power Dissipation
39W
Transistor Case Style
TO-220FP
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002