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S29GL01GT10FHI010
Flash Memory, MirrorBit Eclipse Architecture, Parallel NOR, 1 Gbit, 128M x 8bit, CFI, Parallel
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10FHI010
Order Code2768058
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664081, S29GL01GT10FHI010
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$20.400 (S$22.236) |
| 10+ | S$18.400 (S$20.056) |
| 25+ | S$15.980 (S$17.4182) |
| 50+ | S$15.650 (S$17.0585) |
| 100+ | S$15.630 (S$17.0367) |
Price for:Each
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Multiple: 1
S$20.40 (S$22.24 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10FHI010
Order Code2768058
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664081, S29GL01GT10FHI010
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Configuration128M x 8bit
InterfacesCFI, Parallel
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency Max-
Access Time100ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GT10FHI010 is a 128M x 8bit, 1Gbit, MIRRORBIT™ Eclipse parallel NOR flash product fabricated on 45nm process technology. Device is ideal for embedded applications that require higher density, better performance and lower power consumption.
- VIO=VCC=2.7- 3.6V(high address sector protected), 100ns random access time
- CFI parallel interface
- Asynchronous 32-byte page read
- 512-byte programming buffer, programming in page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC) - internal hardware ECC w/ single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- 100,000 program/erase cycles, 20yrs data retention, separate 2048byte OTP array w/ 4 lockable region
- Fortified ball-grid array package (LAA064) 13 x 11mm, industrial temperature range from -40 to 85°C
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Configuration
128M x 8bit
IC Case / Package
FBGA
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Interfaces
CFI, Parallel
No. of Pins
64Pins
Access Time
100ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85423269
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009215