Print Page
DMC3016LDV-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 21 A, 21 A, 0.0095 ohm
Image is for illustrative purposes only. Please refer to product description.
3,518 In Stock
Need more?
3518 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.595 (S$0.6485) |
| 500+ | S$0.575 (S$0.6268) |
| 1000+ | S$0.542 (S$0.5908) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$59.50 (S$64.85 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC3016LDV-7
Order Code2709538RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id21A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0095ohm
Continuous Drain Current Id N Channel21A
Continuous Drain Current Id P Channel21A
Drain Source On State Resistance N Channel0.0095ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0095ohm
Transistor Case StylePowerDI3333
Gate Source Threshold Voltage Max2V
Power Dissipation Pd900mW
No. of Pins8Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.0095ohm
Continuous Drain Current Id P Channel
21A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0095ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
21A
Drain Source On State Resistance N Channel
0.0095ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerDI3333
Power Dissipation Pd
900mW
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000034