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DMG1012UW-7
Power MOSFET, N Channel, 20 V, 1 A, 0.45 ohm, SOT-323, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG1012UW-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Full Reel3127529
Re-Reel3127309RL
Cut Tape3127309
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | S$0.292 | S$1.46 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.292 (S$0.3183) |
| 50+ | S$0.249 (S$0.2714) |
| 100+ | S$0.205 (S$0.2234) |
| 500+ | S$0.144 (S$0.157) |
| 1500+ | S$0.142 (S$0.1548) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | S$0.082 (S$0.0894) |
| 9000+ | S$0.081 (S$0.0883) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1012UW-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Full Reel3127529
Re-Reel3127309RL
Cut Tape3127309
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.45ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation290mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMG1012UW-7 is a N-channel enhancement mode MOSFET.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, ESD protected up to 2kV
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±6V at TA = +25°C
- Continuous drain current is 1A at TA = +25°C, steady state
- Pulsed drain current is 6A at TA = +25°C
- Total power dissipation is 0.29W at TA = +25°C
- SOT323 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
290mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.45ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000053