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DMN10H6D2LFDB-7
Dual MOSFET, N Channel, 100 V, 100 V, 270 mA, 270 mA, 6 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H6D2LFDB-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828401RL
Cut Tape3828401
Your Part Number
630 In Stock
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630 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Re-Reel | 5 | S$1.060 | S$5.30 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$1.060 (S$1.1554) |
| 10+ | S$0.707 (S$0.7706) |
| 100+ | S$0.448 (S$0.4883) |
| 500+ | S$0.350 (S$0.3815) |
| 1000+ | S$0.169 (S$0.1842) |
| 5000+ | S$0.166 (S$0.1809) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H6D2LFDB-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828401RL
Cut Tape3828401
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id270mA
Continuous Drain Current Id N Channel270mA
On Resistance Rds(on)3.4ohm
Continuous Drain Current Id P Channel270mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel6ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleU-DFN2020
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd1W
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
270mA
Continuous Drain Current Id P Channel
270mA
Drain Source On State Resistance N Channel
6ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1W
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
270mA
On Resistance Rds(on)
3.4ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
U-DFN2020
No. of Pins
6Pins
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001