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DMN2014LHAB-13
Dual MOSFET, N Channel, 20 V, 20 V, 9.3 A, 9.3 A, 0.013 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN2014LHAB-13Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828403RL
Cut Tape3828403
Your Part Number
49 In Stock
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49 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Re-Reel | 1 | S$1.640 | S$1.64 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.640 (S$1.7876) |
| 10+ | S$1.010 (S$1.1009) |
| 100+ | S$0.687 (S$0.7488) |
| 500+ | S$0.630 (S$0.6867) |
| 1000+ | S$0.618 (S$0.6736) |
| 5000+ | S$0.605 (S$0.6594) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2014LHAB-13Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828403RL
Cut Tape3828403
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id9.3A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.01ohm
Continuous Drain Current Id N Channel9.3A
Continuous Drain Current Id P Channel9.3A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max710mV
Transistor Case StyleU-DFN2030
No. of Pins6Pins
Power Dissipation Pd1.7W
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
9.3A
On Resistance Rds(on)
0.01ohm
Continuous Drain Current Id P Channel
9.3A
Drain Source On State Resistance N Channel
0.013ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
U-DFN2030
Power Dissipation Pd
1.7W
Power Dissipation P Channel
1.7W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
9.3A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
710mV
No. of Pins
6Pins
Power Dissipation N Channel
1.7W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001