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DMN2501UFB4-7
Power MOSFET, N Channel, 20 V, 1 A, 0.17 ohm, X2-DFN1006, Surface Mount
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2,980 In Stock
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2980 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.601 (S$0.6551) |
| 10+ | S$0.368 (S$0.4011) |
| 100+ | S$0.179 (S$0.1951) |
| 500+ | S$0.146 (S$0.1591) |
| 1000+ | S$0.113 (S$0.1232) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$3.00 (S$3.28 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2501UFB4-7
Order Code3943565
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.17ohm
Transistor Case StyleX2-DFN1006
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max760mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
X2-DFN1006
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
760mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001